Beilstein Arch. 2022, 202214. https://doi.org/10.3762/bxiv.2022.14.v1
Published 17 Mar 2022
Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining and nanoprinting. For many of these applications, a precise control of the ion-beam induced processes is essential. The effect of contaminations on these processes has not been explored thoroughly but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers, i.e. water, adsorbed on a silicon surface, influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing of the hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not changed significantly by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered depends largely on the incidence angle. This fraction is largest for incidence angles between 70 and 80 degrees defined with respect to the sample surface. Overall, it changes from 25% to 65%.
Keywords: Molecular dynamics, Simulations, Silicon, Contamination, Water, Argon ions, ion bombardment, Angle dependency, Low energy.
|Format: DOCX||Size: 1.1 MB||Download|
When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:
Defoort-Levkov, G. R. N.; Bahm, A. S.; Philipp, P. Beilstein Arch. 2022, 202214. doi:10.3762/bxiv.2022.14.v1
|Download RIS (Reference Manager)||Download BIB (BIBTEX)|
© 2022 Defoort-Levkov et al.; licensee Beilstein-Institut.
This is an open access work licensed under the terms of the Beilstein-Institut Open Access License Agreement (https://www.beilstein-archives.org/xiv/terms), which is identical to the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0). The reuse of material under this license requires that the author(s), source and license are credited. Third-party material in this work could be subject to other licenses (typically indicated in the credit line), and in this case, users are required to obtain permission from the license holder to reuse the material.