In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area. An n+ pocket design is also introduced around the source to enhance tunneling rates and improve the device characteristics. In addition, the gate and n+ pocket region also overlap in the vertical and the lateral directions resulting in an enhanced electric field and, in turn, the ON-state current of the SAA-TFET is highly increased compared with the conventional TFET. Promising results in terms of DC (ION, IOFF, ON/OFF current ratio and SS) and analog (cutoff frequency) performance are obtained for low (VDD = 0.5 V) and high (VDD = 1 V) supply voltages.
Keywords: Band-to-Band Tunneling (BTBT); Source-all-around; tunnel field-effect transistor (TFET); n+ pocket
When a peer-reviewed version of this preprint is available in the Beilstein Journals, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:
Shaker, A.; Maged, A.; Elshorbagy, A.; AbouElainain, A.; Elsabbagh, M. Beilstein Arch. 2019, 201940. doi:10.3762/bxiv.2019.40.v1
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