,
,
,
and
Beilstein Arch. 2026, 202630. https://doi.org/10.3762/bxiv.2026.30.v1
Published 07 Sep 2026
Homoepitaxial diamond films heavily doped with boron, grown by CVD on single-crystal type IIa diamond substrates are investigated. Quantitative analysis of the nominal, structural, and active concentrations of boron atoms in the grown layers was made using secondary ion mass spectrometry, X-ray diffractometry, and van der Pauw method, respectively. Nominal concentrations ranged from 8.2∙1020 cm-3 to 2∙1022 cm-3. Electrophysical measurements revealed metallic conductivity in the epitaxial layers, and a superconducting transition was observed. The dependence of the superconducting critical temperature on the boron doping level was studied. At nominal concentrations of 1022 cm-3 and higher, diamond lost its perfection, transitioning to a graphite-containing phase that lacks the superconducting transition. Thus, this study examined the crossover from the superconducting phase to the boron-carbon phase with a gradual increase in the nominal boron concentration. The critical boron doping level was determined for diamond to exhibit superconductivity while maintaining its crystalline perfection, which is an important parameter for the formation of heavily doped diamond layers with a superconducting transition.
Keywords: heavily boron-doped homoepitaxial layers of CVD diamond, superconducting transition, superconducting critical temperature, boron carbide, secondary ion mass spectrometry, X-ray diffractometry, van der Pauw method, Raman spectroscopy, electrophysical measurements
When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:
Arkhipova, E. A.; Savinov, D. A.; Drozdov, M. N.; Yunin, P. A.; Kraev, S. A.; Lobaev, M. A.; Radishev, D. B.; Bogdanov, S. A.; Gorbachev, A. M.; Vikharev, A. L.; Gordeeva, A. V.; Safonova, V. Y.; Revin, L. S.; Pankratov, A. L. Beilstein Arch. 2026, 202630. doi:10.3762/bxiv.2026.30.v1
Citation data can be downloaded as file using the "Download" button or used for copy/paste from the text window below.
Citation data in RIS format can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and
Zotero.
© 2026 Arkhipova et al.; licensee Beilstein-Institut.
This is an open access work licensed under the terms of the Beilstein-Institut Open Access License Agreement (https://www.beilstein-archives.org/xiv/terms), which is identical to the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0). The reuse of material under this license requires that the author(s), source and license are credited. Third-party material in this work could be subject to other licenses (typically indicated in the credit line), and in this case, users are required to obtain permission from the license holder to reuse the material.
