Beilstein Arch. 2023, 202335. https://doi.org/10.3762/bxiv.2023.35.v1
Published 29 Aug 2023
The growth of ultrathin layers of oxides by Atomic Layer Deposition (ALD) is well documented for oxide substrates such as SiO2, Bi2O3, Al2O3, in which oxygen is the only negatively charged atom in the substrate. In contrast, the knowledge regarding ALD growth on oxide substrates that contain other negatively charged atoms, such as halogens, is quite limited. The commonly used bismuth oxyhalide family of materials are characterized by a low density of surface hydroxyls, required for the initiation of thermal ALD growth of oxides, thus hampering the ability to grow ultrathin layers of oxides on their surface. This restriction becomes even more severe if the process has to be performed at low temperatures. In this work, we show that low-temperature Al2O3 can be grown on bismuth oxyhalide materials by ALD. The coating conformality is monitored by the ability of the ultrathin layers to suppress the photocatalytic activity of the substrates. It was found that UV-ozone treatment under a humid atmosphere prior to deposition resulted in significant conformality improvement of the coatings on all catalysts.
Keywords: ALD; Bismuth oxyhalide; UV-ozone; surface treatment
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Arbell, N.; Regev, S.; Paz, Y. Beilstein Arch. 2023, 202335. doi:10.3762/bxiv.2023.35.v1
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