Enhanced electronic transport properties of Te roll-like nanostructures

  1. Emilson R. VianaORCID Logo,
  2. Nestor CifuentesORCID Logo and
  3. Juan C. González

Submitting author affiliation: Universidade Tecnológica Federal do Paraná, Curitiba/PR, Brazil

Beilstein Arch. 2022, 202241. https://doi.org/10.3762/bxiv.2022.41.v1

Published 31 May 2022

  • Preprint

Abstract

In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single nanostructure back gated field-effect-transistors by photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission electron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit a p-type conductivity with enhanced field-effect hole mobility between 273 cm2/Vs at 320 K and 881 cm2/Vs at low 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free hole conduction at high temperatures. The free hole mobility follows a negative power law temperature behavior, with an exponent between -1.28 and -1.42, indicating strong phonon scattering in this temperature range. At lower temperatures, the electronic conduction is dominated by Nearest-Neighbor Hopping (NNH) conduction in the acceptors' band, with a small activation energy ENNH ~ 0.6 meV and acceptors concentration of NA ~ 1x1016 cm-3. These results demonstrate the enhanced electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. 

Keywords: Tellurium; Nanobelts; Hopping Conduction; Electrical Characterization; Field Effect Transistors;

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When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:

Viana, E. R.; Cifuentes, N.; González, J. C. Beilstein Arch. 2022, 202241. doi:10.3762/bxiv.2022.41.v1

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