Abstract

In this present work, the CuNiCoS₄ thiospinel nanocrystals were synthesized by hot-injection method and characterized by x-ray diffractometer (XRD) and high resolution transmission electron microscope HR-TEM as well as scanning electron microscope (SEM) with energy dispersive spectroscopy (EDS) detector. The XRD, EDS and HR-TEM analysis confirmed the composition of the CuNiCoS₄ and successful synthesis. The obtained CuNiCoS₄ thiospinel nanocrystals were tested for photodiode as well as capacitance applications between the Au and p-type Si by I-V and C-V characteristics. The fabricated Au/CuNiCoS₄/p-Si device exhibited good rectifying property as well as high photoresponse activity and low series resistance and high shunt resistance. The C-V characteristics revealed that the obtained photodiode has voltage and frequency dependent capacitance and conductance characteristics. The fabricated device with CuNiCoS₄ thiospinel nanocrystals can be employed and developed for high efficiency optoelectronic applications.

Keywords: CuNiCoS4; Schottky devices; Au/CuNiCoS4/p-Si device; optoelectronic applications.

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KOCYIGIT, A.; SARILMAZ, A.; ÖZTÜRK, T.; OZEL, F.; YILDIRIM, M. Beilstein Arch. 2021, 202134. doi:10.3762/bxiv.2021.34.v1

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