The Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

  1. Adem KOCYIGITORCID Logo,
  2. Adem SARILMAZ,
  3. Teoman ÖZTÜRK,
  4. Faruk OZEL and
  5. Murat YILDIRIMORCID Logo

Submitting author affiliation: Selcuk University, Konya, Turkey

Beilstein Arch. 2021, 202134. https://doi.org/10.3762/bxiv.2021.34.v1

Published 19 Apr 2021

  • Preprint

Abstract

In this present work, the CuNiCoS4 thiospinel nanocrystals were synthesized by hot-injection method and characterized by x-ray diffractometer (XRD) and high resolution transmission electron microscope HR-TEM as well as scanning electron microscope (SEM) with energy dispersive spectroscopy (EDS) detector. The XRD, EDS and HR-TEM analysis confirmed the composition of the CuNiCoS4 and successful synthesis. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode as well as capacitance applications between the Au and p-type Si by I-V and C-V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying property as well as high photoresponse activity and low series resistance and high shunt resistance. The C-V characteristics revealed that the obtained photodiode has voltage and frequency dependent capacitance and conductance characteristics. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed and developed for high efficiency optoelectronic applications.

Keywords: CuNiCoS4; Schottky devices; Au/CuNiCoS4/p-Si device; optoelectronic applications.

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When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:

KOCYIGIT, A.; SARILMAZ, A.; ÖZTÜRK, T.; OZEL, F.; YILDIRIM, M. Beilstein Arch. 2021, 202134. doi:10.3762/bxiv.2021.34.v1

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