We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) for the study of embedded silicon-oxide interfaces in the field of chemical and field-effect passivation. Analyzed parameters by these measurements are linked to different factors and specifically to defects density of embedded silicon-dielectric interfaces, surface band bending or the distribution of charges in the nearest surface volume.
Furthermore, this COCOS-KPFM correlative analysis turns out to be a useful method to access to chemical and field-effect passivation. We confirm that it is possible to differentiate the influence of local band bending on sample passivation (i.e. field effect passivation) from the effects due to the local recombination rates (i.e. chemical passivation).
The measurements were carried on five different passivation layers, precisely, 10.5 nm-thick SiO2, 50 nm-thick SiN, 7nm-thick Al2O3, 7 nm-thick HfO2 and double layer of 7 nm-thick Al2O3 below 53 nm-thick Ta2O5. This correlative analysis indicates that HfO2 present to be the best chemical passivation and SiN is the worst case in term of field effect passivation for p-type silicon. Additionally, we confirm that Ta2O5 layer on top of Al2O3 increase the defects density.
Keywords: silicon-dielectric interface, band bending, defects density, recombination rate, surface passivation
When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:
Aubriet, V.; Courouble, K.; Gros-Jean, M.; Borowik, L. Beilstein Arch. 2021, 20212. doi:10.3762/bxiv.2021.2.v1
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