Greatly improved adsorption and degradation by S-doped (001)-TiO2 via the vapour-thermal method

  1. X.Y. Sun,
  2. X. Zhang,
  3. X. Sun,
  4. N.X. Qian,
  5. Min Wang and
  6. Y.Q MaORCID Logo

Submitting author affiliation: Anhui Key Laboratory of Information Materials and Devices, School of Physics and Materials Science, Anhui University, Hefei 230039, China, Hefei, China

Beilstein Arch. 2019, 201944.

Published 24 Jun 2019

  • Preprint


In this work, sulfur (S) doped (001)-face exposed TiO2 was synthesized via the vapor-thermal method at 180 °C or 250 °C, with an S/Ti molar ratio RS/Ti of 0, 0.5, 1, 2, 3, 4, and 5. The S-doped samples at 250 °C exhibited significantly improved photocatalytic performance. The effects of S doping were as follows: (1) The S element exhibits different chemical states in the samples with different RS/Ti. Specifically, it exists in the form of S2− replacing O2− at RS/Ti = 1, and S6+ replacing Ti4+ at RS/Ti ≥ 2. As a result, S doping causes a lattice distortion because the ionic radii of S2− and S6+ differ from that of the O2− and Ti4+. (2) S-doping increases the adsorption coefficient Ae for methylene blue (MB) from 0.9% to 68.5% due to the synergistic effects of the oxygen vacancies, the SO42− adsorbed on the TiO2 surface, and the pore size. (3) S-doping increases the MB degradation rate from 6.9 × 10−2 min−1 to 18.2 × 10−2 min−1 due to an increase in the amount of •OH and •O2− radicals.

Keywords: Vapour-thermal; S-doping; TiO2; photocatalytic properties; chemical state

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When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:

Sun, X.; Zhang, X.; Sun, X.; Qian, N.; Wang, M.; Ma, Y. Beilstein Arch. 2019, 201944. doi:10.3762/bxiv.2019.44.v1

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